Microwave Semiconductor Devices
نویسندگان
چکیده
منابع مشابه
Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices
There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. Nonlinear measurement systems are today available off-the-shelf, but the use of them is still limited. It ...
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ژورنال
عنوان ژورنال: The Journal of the Institute of Television Engineers of Japan
سال: 1976
ISSN: 1884-9644
DOI: 10.3169/itej1954.30.650